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PNP Epitaxial Silicon Transistor
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BC856-BC860 tm PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits 3 • Low Noise: BC859, BC860
• Complement to BC846 . BC850
2
1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings*
Symbol
VCBO VCEO Ta = 25°C unless otherwise noted Parameter Value Units : BC856
: BC857/860
: BC858/859 -80
-50
-30 V
V
V : BC856
: BC857/860
: BC858/859 -65
-45
-30 V
V
V Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. ICBO Collector Cut-off Current VCB= -30V, IE=0 hFE DC Current Gain VCE= -5V, IC= -2mA VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA -90 …
