Datasheet Analog Devices HMC8412LP2FE

Low Noise Amplifier,
0.4 GHz to 10 GHz
HMC8412CHIPS Data Sheet
FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.5 dB typical
Single positive supply (self biased)
High gain: ≤15 dB typical
High OIP3: 32 dBm typical
VDD: 5 V at IDQ = 60 mA
50 Ω matched input and output
Die size: 0.945 mm × 1.545 mm × 0.102 mm RBIAS 2 3 VDD 4 RFOUT HMC8412CHIPS 1 24012-001 RFIN APPLICATIONS
Test instrumentation
Military and space
Telecommunications infrastructure
Software defined radios
Electronic warfare
Radar applications Figure 1. GENERAL DESCRIPTION
The HMC8412CHIPS is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), low noise amplifier that
operates from 0.4 GHz to 10 GHz. The HMC8412CHIPS provides
≤15 dB of typical gain, ≤19 dBm typical output power at 1 dB
gain compression (OP1dB), and a typical output third-order
intercept (OIP3) of 32 dBm. Rev. 0 The HMC8412CHIPS requires 60 mA from a 5 V supply on …

Low Noise Amplifier,
0.4 GHz to 11 GHz
HMC8412 Data Sheet FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.4 dB typical
Single positive supply (self biased)
High gain: ≤15.5 dB typical
High OIP3: ≤33 dBm typical
RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP HMC8412
6 VDD RBIAS 1
GND 2 5 GND RFIN 3 4 RFOUT 23882-001 FEATURES Figure 1. APPLICATIONS
Test instrumentation
Telecommunications
Military radar and communication
Electronic warfare
Aerospace GENERAL DESCRIPTION
The HMC8412 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), low noise wideband
amplifier that operates from 0.4 GHz to 11 GHz.
The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical
noise figure, and a typical output third-order intercept (OIP3) of
≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage.
The saturated output power (PSAT) of ≤20.5 dBm typical enables
the low noise amplifier (LNA) to function as a local oscillator Rev. 0 (LO) driver for many Analog Devices, Inc., balanced, inphase …

REVISIONS
LTR DESCRIPTION DATE Prepared in accordance with ASME Y14.24 APPROVED Vendor item drawing REV
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REV
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OF PAGES REV
PAGE 1 2 PMIC N/A PREPARED BY
RICK OFFICER Original date of drawing
YY-MM-DD CHECKED BY
RAJESH PITHADIA 20-12-15 3 4 A
REV 6 7 8 9 10 11 12 13 DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
https://www.dla.mil/LandandMaritime
TITLE APPROVED BY
JAMES R. ESCHMEYER
SIZE 5 CODE IDENT. NO. MICROCIRCUIT,LINEAR, MMIC, pHEMT 0.4 GHz
TO 11 GHz LOW NOISE AMPLIFIER, GALLIUM
ARSENIDE
DWG NO. V62/21602 16236
PAGE 1 OF 13 DISTRIBUTION STATEMENT A. Approved for public release. Distribution is unlimited.
AMSC N/A 5962-V013-21 1. SCOPE
1.1 Scope. This drawing documents the general requirements of a high performance gallium arsenide (GaAs) monolithic …

Low Noise Amplifier,
0.4 GHz to 11 GHz
HMC8412TCPZ-EP Enhanced Product FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.4 dB typical at 0.4 GHz to 3 GHz
Single positive supply (self biased)
High gain: ≤15.5 dB typical
High OIP3: ≤33 dBm typical
RoHS compliant, 2 mm × 2 mm, 6-lead LFCSP HMC8412TCPZ-EP
6 VDD RBIAS 1
GND 2 5 GND RFIN 3 4 RFOUT 25386-001 FEATURES Figure 1. ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
1 assembly/test site
1 fabrication site
Product change notification
Qualification data available on request APPLICATIONS
Test instrumentation
Telecommunications
Military radar and communication
Electronic warfare
Aerospace GENERAL DESCRIPTION
The HMC8412TCPZ-EP is a gallium arsenide (GaAs),
monolithic microwave integrated circuit (MMIC), …