Datasheet Infineon 1EDB8275F

E i c e D R I V E R ™ 1E D B x 2 7 5 F
Single-channel isolated gate-dri ver ICs in 150 mil DSO package
Description
EiceDRIVER™ 1EDBx275F is a family of single-channel isolated gate-driver ICs, designed to drive Si, SiC and GaN
power switches.
1EDBx275F is available in an 8-pin DSO package with 4 mm input-to-output creepage distance; it provides
isolation by means of on-chip coreless transformer (CT) technology.
With tight timing specifications, 1EDBx275F is designed for fast-switching medium-to-high power systems.
Excellent common-mode rejection, low part-to-part skew, fast signal propagation and small package size make
1EDBx275F a superior alternative to high-side driving solutions using optocouplers or pulse transformers.
Features
• Single-channel isolated gate-driver
• 45 ns input-to-output propagation delay with excellent accuracy (+4/-6 ns)
• Separate low impedance source and sink outputs
• Fast clamping of parasitics-induced output overshoots under UVLO conditions
• Fast start-up times and fast recovery after supply glitches
• Optimized UVLO levels (4 V, 8 V, 12 V, 15 V) for Si, SiC and GaN transistors
• High common mode transient immunity (CMTI > 300 V/ns)
• Available in 8-pin 150mil DSO package
• Fully qualified according JEDEC for industrial grade applications
Isolation and safety certificates
• UL 1577 with VISO = 3000 VRMS Table 1 EiceDRIVER™ 1EDBx275F Portfolio Part number Peak source / sink current UVLO ON / OFF 1EDB7275F Isolation certification Package UL 1577
(VISO = 3000 VRMS) PG-DSO-8 4.2 V / 3.9 V 1EDB8275F 8.0 V / 7.0 V 5.4 A / 9.8 A …