Approx. price, US$ | .864 | 1ku | .864 | 1ku | .864 | 1ku |
Architecture | CMOS | CMOS | CMOS |
CMRR(Min), dB | 109 | 109 | 109 |
CMRR(Typ), dB | 130 | 130 | 130 |
Features | EMI Hardened,High Cload Drive,MUX Friendly,Shutdown,Small Size | EMI Hardened,High Cload Drive,MUX Friendly,Shutdown,Small Size | EMI Hardened,High Cload Drive,MUX Friendly,Shutdown,Small Size |
GBW(Typ), MHz | 4.5 | 4.5 | 4.5 |
Input bias current(Typ), pA | 10 | 10 | 10 |
Input common mode headroom (to negative supply)(Typ), V | -0.1 | -0.1 | -0.1 |
Input common mode headroom (to positive supply)(Typ), V | 0.1 | 0.1 | 0.1 |
Iq per channel(Max), mA | 0.685 | 0.685 | 0.685 |
Iq per channel(Typ), mA | 0.56 | 0.56 | 0.56 |
Number of channels | 4 | 4 | 4 |
Offset drift(Typ), uV/C | 0.3 | 0.3 | 0.3 |
Operating temperature range, C | -40 to 125 | -40 to 125 | -40 to 125 |
Output current(Typ), mA | 75 | 75 | 75 |
Output swing headroom (to negative supply)(Typ), V | 0.025 | 0.025 | 0.025 |
Output swing headroom (to positive supply)(Typ), V | -0.025 | -0.025 | -0.025 |
Package Group | QFN|14,SOIC|14,TSSOP|14 | QFN|14,SOIC|14,TSSOP|14 | QFN|14,SOIC|14,TSSOP|14 |
Package size: mm2:W x L, PKG | 14QFN: 4 mm2: 2 x 2 (QFN|14),14SOIC: 52 mm2: 6 x 8.65 (SOIC|14),14TSSOP: 32 mm2: 6.4 x 5 (TSSOP|14) | 14QFN: 4 mm2: 2 x 2 (QFN|14),14SOIC: 52 mm2: 6 x 8.65 (SOIC|14),14TSSOP: 32 mm2: 6.4 x 5 (TSSOP|14) | 14QFN: 4 mm2: 2 x 2 (QFN|14),14SOIC: 52 mm2: 6 x 8.65 (SOIC|14),14TSSOP: 32 mm2: 6.4 x 5 (TSSOP|14) |
Rail-to-rail | In,Out | In,Out | In,Out |
Rating | Catalog | Catalog | Catalog |
Slew rate(Typ), V/us | 21 | 21 | 21 |
Total supply voltage(Max), +5V=5, +/-5V=10 | 40 | 40 | 40 |
Total supply voltage(Min), +5V=5, +/-5V=10 | 2.7 | 2.7 | 2.7 |
Vn at 1 kHz(Typ), nV/rtHz | 10.8 | 10.8 | 10.8 |
Vos (offset voltage @ 25 C)(Max), mV | 0.83 | 0.83 | 0.83 |