KSB1366 KSB1366
LOW FREQUENCY POWER AMPLIFIER
• Complement to KSD2012 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO Collector-Base Voltage Parameter Value
-60 Units
V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -60
-7 V
V IC Collector Current(DC) -3 A IB Base Current PC Collector Dissipation (Ta=25°C) -0.5 A 2 W PC Collector Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO Parameter
Collector-Emitter Breakdown Voltage Test Condition
IC = -50mA, IB = 0 Min.
-60 Typ. Max. ICBO Collector Cut-off Current VCB = -60V, IE = 0 -100 µA IEBO Emitter Cut-off Current VEB = -7V, IC = 0 -100 µA hFE1
hFE2 DC Current Gain VCE = -5V, IC = -0.5A
VCE = -5V, IC = -3A VCE(sat) Collector-Emitter Saturation Voltage IC = -2A, IB = -0.2A -0.5 -1 V VBE(on) Base-Emitter ON Voltage VCE = -5V, IC = -0.5A -0.7 -1 V fT Current Gain Bandwidth Product VCE = -5V, IC = -0.5A 9 100
20 Units
V 320 MHz hFE Classification
Classification Y G hFE1 100 ~ 200 150 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB1366 Typical Characteristics IC[A], COLLECTOR CURRENT -5 1000 VCE = -5V IB = IB = -3 m
-70 A
IB = hFE, DC CURRENT GAIN -8
0m A -4 mA …
