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Silicon NPN Phototransistor
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BPV11F
www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
• Fast response times 12784 • Angle of half sensitivity: = ± 15°
• Base terminal connected
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912 DESCRIPTION
BPV11F is a silicon NPN phototransistor with high radiant
sensitivity in black, T-1¾ plastic package with base terminal
and daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters. APPLICATIONS
• Detector for industrial electronic circuitry, measurement
and control PRODUCT SUMMARY
COMPONENT Ica (mA) (deg) 0.5 (nm) 9 ± 15 900 to 980 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ BPV11F
Note
• Test condition see table “Basic Characteristics” ORDERING INFORMATION
ORDERING CODE …
