eGaN® FET DATASHEET EPC2304 EPC2304 – Enhancement Mode Power Transistor
VDS , 200 V
RDS(on) , 3.1 mΩ typ D ARY IN
ELIM G PR EFFICIENT POWER CONVERSION
S HAL Application Notes:
• Easy-to-use and reliable gate, Gate Drive ON = 5 V typical,
OFF = 0 V (negative voltage not needed)
• Top of FET is electrically connected to source
• Questions: Ask a GaN Expert E
2 3 PC
X 0
X YY 4
X W
X W
X Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate. Questions:
EPC2304
Package size: 3 x 5 mm
Applications Maximum Ratings • Synchronous Rectification PARAMETER
VDS
ID VALUE Drain-to-Source Voltage (Continuous) 200 Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 240 Continuous (TA = 25°C) 102 Pulsed (25°C, TPULSE = 300 µs) 260 Gate-to-Source Voltage 6 Gate-to-Source Voltage -4 TJ Operating Temperature -40 to 150 TSTG Storage Temperature -40 to 150 VGS UNIT …
