Datasheet NXP MRF8P29300HSR6

Freescale Semiconductor
Technical Data Document Number: MRF8P29300H
Rev. 0, 2/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 2700 and 2900 MHz. These devices are suitable for use in pulsed
applications.
• Typical Pulsed Performance: VDD = 30 Volts, IDQ = 100 mA
Pout
(W) f
(MHz) Gps
(dB) ηD
(%) IRL
(dB) 320 Peak 2900 13.3 50.5 -17 Signal Type
Pulsed (100 μsec,
10% Duty Cycle) MRF8P29300HR6
MRF8P29300HSR6
2700-2900 MHz, 320 W, 30 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak
Power, 300 μsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout)
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters …