Datasheet Inchange Semiconductor 2N6545

isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6545 DESCRIPTION Excellent Safe Operating Area High Voltage,High Speed Low Saturation Voltage
APPLICATIONS Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for 115 and 220 volt line operated switch-mode
applications such as: Switching regulators PWM inverters and motor controls Solenoid and relay drivers Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.4 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6545 ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1.0A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2.0A 5.0 V Base-Emitter Saturation Voltage IC= 5A; IB= 1.0A 1.6 V IEBO Emitter Cutoff Current VEB= 9V; IC= 0 1.0 mA ICBO Collector Cutoff Current VCB= 850V;IE= 0 0.5 mA hFE-1 DC Current Gain IC= 2.5A; VCE= 3V 12 60 hFE-2 DC Current Gain IC= 5A; VCE= 3V 7 35 Current Gain-Bandwidth Product IC= 0.3A ; VCE= 10V; ftest=1.0MHz VBE(sat) fT CONDITIONS MIN MAX 400 UNIT
V 6.0 MHz Switching times-Resistive Load
td Delay Time tr Rise Time ts Storage Time tf Fall Time isc website：www.iscsemi.com IC= 5A , VCC= 250V,
IB1= -IB2= 1A, tp= 0.1ms
Duty Cycle≤2.0% 2 0.05 μs 1.0 μs 4.0 μs 1.0 μs isc & iscsemi is registered trademark …