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NPN Silicon AF and Switching Transistor
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BCX42
PNP Silicon AF and Switching Transistor
• For general AF applications 2 3 • High breakdown voltage 1 • Low collector-emitter saturation voltage
• Complementary type: BCX41 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101 Type
BCX42 Marking
DKs Pin Configuration
1=B 2=E Package
SOT23 3=C Maximum Ratings
Parameter Symbol Value Collector-emitter voltage VCEO 125 Collector-base voltage VCBO 125 Emitter-base voltage VEBO 5 Collector current IC Peak collector current, tp ≤ 10 ms ICM Base current IB 100 Peak base current IBM 200 Total power dissipation Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance
Parameter Symbol Value RthJS ≤ 215 800
1 Unit
V mA
A
mA TS ≤ 79 °C Junction -soldering point1) -65 . 150
Unit
K/W 1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-10-04 BCX42
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values …
