Datasheet ON Semiconductor CPH3362

Ordering number : ENA2321A CPH3362
Power MOSFET
100V, 1.7Ω, 0.7A, Single P-Channel http://onsemi.com Features On-resistance RDS(on)1=1.3Ω (typ) 4V drive Halogen free compliance Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Drain to Source Voltage Symbol Conditions Value VDSS Unit
100 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID 0.7 A Drain Current (Pulse) IDP PW10s, duty cycle1% Power Dissipation PD When mounted on ceramic substrate (900mm20.8mm) Junction Temperature Tj Storage Temperature Tstg 2.8 A 1 W 150 C 55 to +150 C This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected. Thermal Resistance Ratings
Parameter Symbol Junction to Ambient
When mounted on ceramic substrate (900mm20.8mm) RJA Value
125 Unit
C/W Electrical Characteristics at Ta  25C
Value
Parameter Symbol Conditions Unit
min typ max 100 Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=-100V, VGS=0V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA Forward Transconductance gFS VDS=10V, ID=0.3A 1.0 RDS(on)1 ID=0.7A, VGS=10V 1.3 1.7 RDS(on)2 ID=0.3A, VGS=4.5V 1.4 1.96 RDS(on)3 ID=0.3A, VGS=4V 1.45 2.1 Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss V 1.2 142
VDS=20V, f=1MHz -1 A 10 A 2.6 V
S pF 12 pF 7.3 pF Continued on next page. ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014 72314HK TC-00003137/40914TKIM PE No.A2321-1/5 CPH3362
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