Datasheet IRG7PH35UD1-EP - International Rectifier INSULATED GATE BIPOLAR TRANSISTOR
Part Number: IRG7PH35UD1-EP
Detailed Description
Manufacturer: International Rectifier
Description: INSULATED GATE BIPOLAR TRANSISTOR
Specifications:
- Transistor Type: IGBT
- DC Collector Current: 50 A
- Collector Emitter Voltage, Vces: 1200 V
- Power Dissipation, Pd: 179 mW
- Operating Temperature Range: -55°C to +150°C
- Number of Pins: 3
RoHS: Yes
Other Names:
IRG7PH35UD1EP, IRG7PH35UD1 EP
