Datasheet IXGR60N60C3C1 - IXYS IGBT,600V,30A,ISOPLUS247

Detailed Description

Manufacturer: IXYS

Description: IGBT,600V,30A,ISOPLUS247

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Docket:
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
(Electrically Isolated Back Surface)
IXGR60N60C3C1
VCES IC110 VCE(sat) tfi(typ)
= = Ј =

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 75 A
• Collector Emitter Voltage Vces: 2.5 V
• Power Dissipation Max: 170 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C
• Number of Pins: 3

RoHS: Yes