Datasheet IXGR32N170AH1 - IXYS IGBT, ISOPLUS247

Detailed Description

Manufacturer: IXYS

Description: IGBT, ISOPLUS247

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Docket:
Advance Technical Information
High Voltage IGBT with Diode
Electrically Isolated Tab
IXGR 32N170AH1
VCES IC25 VCE(sat) tfi(typ)

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 26 A
• Collector Emitter Voltage Vces: 5.2 V
• Power Dissipation Max: 200 W
• Collector Emitter Voltage V(br)ceo: 1.7kV
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: ISOPLUS-247
• Current Ic Continuous a Max: 26 A
• Fall Time tf: 50 ns
• Junction to Case Thermal Resistance A: 0.65°C/W
• Package / Case: ISOPLUS-247
• Pin Configuration: Copack (FRD)
• Power Dissipation: 200 W
• Rise Time: 50 ns
• Termination Type: Through Hole
• Transistor Polarity: NPN
• Voltage Vces: 1700 V

RoHS: Yes