Datasheet 1MBI200S-120 - Fuji Electric IGBT MODULE, 1200 V, 200 A

Detailed Description

Manufacturer: Fuji Electric

Description: IGBT MODULE, 1200 V, 200 A

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Docket:
Fuji Semiconductor, Inc.

- P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com


Specifications:

• Transistor Type: IGBT Module
• DC Collector Current: 300 A
• Collector Emitter Voltage Vces: 2.6 V
• Power Dissipation Max: 1.3kW
• Collector Emitter Voltage V(br)ceo: 1200 V
• Transistor Case Style: M127
• Current Ic @ Vce Sat: 200 A
• Current Ic Continuous a Max: 300 A
• Current Temperature: 25°C
• External Depth: 62 mm
• External Length / Height: 35 mm
• External Width: 108 mm
• Fall Time tf: 300 ns
• Full Power Rating Temperature: 25°C
• Isolation voltage: 2500 V
• Junction Temperature Tj Max: 150°C
• Number of Transistors: 1
• Package / Case: M127
• Power Dissipation: 1500 W
• Power Dissipation Pd: 1500 W
• Pulsed Current Icm: 600 A
• Rise Time: 600 ns
• Termination Type: Screw
• Transistor Polarity: N Channel
• Voltage Vces: 1200 V
• Weight: 0.4kg

RoHS: Yes

Other Names:

1MBI200S120, 1MBI200S 120