Datasheet BSM50GB120DLC - Infineon IGBT MODULE, DUAL, 1200 V

Detailed Description

Manufacturer: Infineon

Description: IGBT MODULE, DUAL, 1200 V

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Docket:
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM50GB120DLC
Hцchstzulдssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties

Specifications:

• Alternate Case Style: M34a
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Collector Emitter Voltage Vces: 2.6 V
• Current Ic Continuous a Max: 50 A
• Current Temperature: 80°C
• DC Collector Current: 115 A
• Fall Time tf: 0.03Вµs
• Module Configuration: Dual
• Mounting Type: Screw
• Number of Pins: 7
• Operating Temperature Range: -40°C to +125°C
• Package / Case: Half Bridge 1
• Power Dissipation Max: 460 W
• Power Dissipation Pd: 460 W
• Power Dissipation: 460 W
• Pulsed Current Icm: 100 A
• Rise Time: 0.05Вµs
• Transistor Case Style: Module
• Transistor Type:
• Voltage Vces: 1.2kV

RoHS: Yes