Datasheet SEMIX452GB176HDS - Semikron IGBT MODULE, 2X1700V

Detailed Description

Manufacturer: Semikron

Description: IGBT MODULE, 2X1700V

Download Data Sheet

Docket:
SEMiX 452GB176HDs
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX® 2s Trench IGBT Modules
SEMiX 452GB176HDs Module Preliminary Data Inverse Diode
Features

Specifications:

• Av Current Ic: 430 A
• Collector Emitter Voltage V(br)ceo: 1.2 V
• Collector Emitter Voltage Vces: 2.45 V
• Current Ic Continuous a Max: 430 A
• DC Collector Current: 430 A
• Forward Surge Current Ifsm Max: 2000 A
• Mounting Type: Screw
• Number of Pins: 12
• Operating Temperature Range: -40°C to +150°C
• Package / Case: SEMiX 2s
• Pulsed Current Icm: 600 A
• Repetitive Reverse Voltage Vrrm Max: 1700 V
• Rise Time: 105 ns
• Transistor Case Style: SEMiX 2s
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 1700 V

RoHS: Yes