Datasheet SEMIX202GB066HDS - Semikron IGBT MODULE, 2X600V

Detailed Description

Manufacturer: Semikron

Description: IGBT MODULE, 2X600V

Download Data Sheet

Docket:
SEMiX 202GB066HDs
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX®2s Trench IGBT Modules
SEMiX 202GB066HDs Module Preliminary Data Inverse Diode
Features

Specifications:

• Av Current Ic: 275 A
• Collector Emitter Voltage V(br)ceo: 1 V
• Collector Emitter Voltage Vces: 1.9 V
• Current Ic Continuous a Max: 275 A
• DC Collector Current: 274 A
• Forward Surge Current Ifsm Max: 1000 A
• Mounting Type: Screw
• Operating Temperature Range: -40°C to +175°C
• Package / Case: SEMiX 2s
• Pulsed Current Icm: 400 A
• Repetitive Reverse Voltage Vrrm Max: 600 V
• Rise Time: 80 ns
• Transistor Case Style: SEMiX 2s
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 600 V

RoHS: Yes