Datasheet ZTX558 - Diodes TRANSISTOR, PNP, E-LINE

Detailed Description

Manufacturer: Diodes

Description: TRANSISTOR, PNP, E-LINE

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Docket:
PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94 FEATURES * 400 Volt VCEO * 200mA continuous current * Ptot= 1 Watt
ZTX558
C B
E

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 400 V
• Collector Emitter Voltage Vces: 500 mV
• Continuous Collector Current Ic Max: 200 mA
• Current Ic @ Vce Sat: 50 mA
• Current Ic Continuous a Max: 200 mA
• Current Ic hFE: 50 mA
• DC Collector Current: 200 mA
• DC Current Gain hFE: 100
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 50 MHz
• Gain Bandwidth ft Typ: 50 MHz
• Hfe Min: 100
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +200°C
• Package / Case: E-Line
• Power Dissipation Pd: 1 W
• Power Dissipation Ptot Max: 1 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: E-Line
• Transistor Polarity: PNP
• Voltage Vcbo: 400 V

RoHS: Yes