Datasheet ZTX657 - Diodes TRANSISTOR, NPN, E-LINE

Detailed Description

Manufacturer: Diodes

Description: TRANSISTOR, NPN, E-LINE

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Docket:
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS
ISSUE 2 JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt
ZTX656 ZTX657
C B
E

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 300 V
• Collector Emitter Voltage Vces: 500 mV
• Continuous Collector Current Ic Max: 500 mA
• Current Ic @ Vce Sat: 100 mA
• Current Ic Continuous a Max: 500 mA
• Current Ic hFE: 100 mA
• DC Collector Current: 500 mA
• DC Current Gain hFE: 50
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 30 MHz
• Gain Bandwidth ft Typ: 30 MHz
• Hfe Min: 50
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• Operating Temperature Range: -55°C to +200°C
• Package / Case: E-Line
• Power Dissipation Pd: 1 W
• Power Dissipation Ptot Max: 1 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: E-Line
• Transistor Polarity: NPN
• Voltage Vcbo: 300 V

RoHS: Yes