Datasheet NTE2310 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 450 V, TO-218

Detailed Description

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, 450 V, TO-218

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Docket:
NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch
Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications.

Absolute Maximum Ratings: Collector­Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V Collector­Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak (tp 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 450 V
• DC Collector Current: 8 A
• DC Current Gain Max (hfe): 10
• Operating Temperature Range: -65°C to +175°C
• Power Dissipation Pd: 125 W
• Transistor Polarity: NPN

Accessories:

• WAKEFIELD SOLUTIONS - 273-AB