Datasheet NTE246 - NTE Electronics DARLINGTON TRANSISTOR, PNP, -80 V, TO-3

Detailed Description

Manufacturer: NTE Electronics

Description: DARLINGTON TRANSISTOR, PNP, -80 V, TO-3

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Docket:
NTE245 (NPN) & NTE246 (PNP) Silicon Complementary Transistors Darlington Power Amplifier
Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications.

Features: D High DC Current Gain: hFE = 4000 Typ @ IC = 5A D Monolithic Construction with Built­In Base­Emitter Shunt Resistors Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector­Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: -80 V
• DC Collector Current: 300 mA
• DC Current Gain Max (hfe): 1000
• Power Dissipation Pd: 625 mW
• Transistor Polarity: PNP

RoHS: Yes