Datasheet NTE254 - NTE Electronics DARLINGTON TRANSISTOR, PNP, -80 V, TO-126
Part Number: NTE254
Detailed Description
Manufacturer: NTE Electronics
Description: DARLINGTON TRANSISTOR, PNP, -80 V, TO-126
Docket:
NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier
Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for generalpurpose amplifier and lowspeed switching applications.
Features: D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with BuiltIn BaseEmitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . .
Specifications:
- Collector Emitter Voltage V(br)ceo: -80 V
- DC Collector Current: 16 A
- DC Current Gain Max (hfe): 2000
- Power Dissipation Pd: 150 W
- Transistor Polarity: PNP
RoHS: Yes