Datasheet NTE396 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 350 V

Detailed Description

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, 350 V

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Docket:
NTE396 Silicon NPN Transistor Power Amplifier & High Speed Switch (Compl to NTE397)
Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Collector­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Emitter­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate Above 25°C . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 350 V
• DC Collector Current: 1 A
• DC Current Gain Max (hfe): 60
• Power Dissipation Pd: 1 W
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 15 MHz

RoHS: Yes