Datasheet BFG35,115 - NXP TRANS NPN 10 V 150 mA SOT223

Detailed Description

Manufacturer: NXP

Description: TRANS NPN 10 V 150 mA SOT223

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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG35 NPN 4 GHz wideband transistor
Product specification Supersedes data of 1995 Sep 12 1999 Aug 24
NXP Semiconductors

Specifications:

• Collector Emitter Voltage V(br)ceo: 18 V
• Current Ic Continuous a Max: 100 mA
• DC Collector Current: 150 mA
• DC Current Gain Min: 25
• DC Current Gain: 70
• Gain Bandwidth ft Typ: 4 GHz
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-223
• Power Dissipation: 1 W
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-223
• Transistor Polarity: NPN
• Transistor Type: RF Wideband
• Transition Frequency Typ ft: 4 GHz

RoHS: Yes

Other Names:

BFG35115, BFG35 115