Datasheet BSP19,115 - NXP

Detailed Description

Manufacturer: NXP

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D087
BSP19; BSP20 NPN high-voltage transistors

Specifications:

• Collector Emitter Voltage V(br)ceo: 350 V
• Collector Emitter Voltage Vces: 500 mV
• Current Ic Continuous a Max: 50 mA
• DC Collector Current: 100 mA
• DC Current Gain Min: 40
• DC Current Gain: 40
• Gain Bandwidth ft Typ: 70 MHz
• Mounting Type: SMD
• Number of Pins: 4
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-223
• Power Dissipation: 1.2 W
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-223
• Transistor Polarity: NPN
• Transistor Type: Power Bipolar
• Transition Frequency Typ ft: 70 MHz

RoHS: Yes

Other Names:

BSP19115, BSP19 115