Datasheet PBSS4140V - NXP TRANSISTOR, NPN, SOT-666

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, NPN, SOT-666

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 40 V
• Collector Emitter Voltage Vces: 110 mV
• Continuous Collector Current Ic Max: 1 A
• Current Ic @ Vce Sat: 500 mA
• Current Ic Continuous a Max: 1 A
• DC Collector Current: 1 A
• DC Current Gain Min: 300
• DC Current Gain: 500 mA
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Min: 150 MHz
• Gain Bandwidth ft Typ: 150 MHz
• Mounting Type: SMD
• Number of Pins: 6
• Operating Temperature Range: -65°C to +125°C
• Package / Case: SOT-666
• Power Dissipation Pd: 300 mW
• Power Dissipation Ptot Max: 300 mW
• SMD Marking: 22
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-666
• Transistor Polarity: NPN
• Voltage Vcbo: 40 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL
• LICEFA - V11-7-6-10
• LICEFA - V11-7