Datasheet PBSS8110Y - NXP TRANSISTOR, NPN, SOT-363

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, NPN, SOT-363

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• Collector Emitter Voltage Vces: 40 mV
• Continuous Collector Current Ic Max: 1 A
• Current Ic Continuous a Max: 1 A
• DC Collector Current: 1 A
• DC Current Gain Min: 80
• DC Current Gain: 1 A
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 100 MHz
• Mounting Type: SMD
• Number of Pins: 6
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-363
• Power Dissipation Pd: 290 mW
• Power Dissipation Ptot Max: 430 mW
• Power Dissipation per device Max: 290 mW
• SMD Marking: 81
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-363
• Transistor Polarity: NPN
• Voltage Vcbo: 120 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL
• LICEFA - V11-7-6-10
• LICEFA - V11-7