Datasheet PEMD9,115 - NXP TRANS NPN/PNP 50 V 0.1 A SOT666

Detailed Description

Manufacturer: NXP

Description: TRANS NPN/PNP 50 V 0.1 A SOT666

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
PEMD9; PUMD9 NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k
Product data sheet Supersedes data of 2003 Nov 04 2004 Apr 15
NXP Semiconductors

Specifications:

• Collector Emitter Voltage V(br)ceo: 50 V
• Collector Emitter Voltage Vces: 100 mV
• Current Ic Continuous a Max: 5 mA
• DC Collector Current: 100 mA
• DC Current Gain Min: 100
• DC Current Gain: 100
• Mounting Type: SMD
• Number of Pins: 6
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-666
• Power Dissipation: 300 mW
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-666
• Transistor Polarity: NPN / PNP
• Transistor Type: General Purpose

RoHS: Yes

Other Names:

PEMD9115, PEMD9 115