Datasheet BUB323ZT4G - ON Semiconductor BIPOLAR TRANSISTOR, DARLI.

Detailed Description

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR, DARLI.

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Specifications:

• Collector Emitter Voltage V(br)ceo: 350 V
• Collector Emitter Voltage Vces: 1.6 V
• Current Ic Continuous a Max: 10 A
• DC Collector Current: 10 A
• DC Current Gain Min: 0.5
• DC Current Gain: 3.4
• Gain Bandwidth ft Typ: 2 MHz
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -65°C to +175°C
• Package / Case: D2-PAK
• Power Dissipation: 150 W
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: D2-PAK
• Transistor Polarity: NPN
• Transistor Type: Power Bipolar
• Transition Frequency Typ ft: 2 MHz

RoHS: Yes