Datasheet BUX85G - ON Semiconductor BIPOLAR TRANSISTOR

Detailed Description

Manufacturer: ON Semiconductor

Description: BIPOLAR TRANSISTOR

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Docket:
BUX85G SWITCHMODEtNPN Silicon Power Transistors
The BUX85G is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.
Features http://onsemi.com
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VCEO(sus) - 450 V VCES(sus) - 1000 V Fall time = 0.3 ms (typ) at IC = 1.0 A VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.2 A These Devices are Pb-Free and are RoHS Compliant*

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 450 V
• Collector Emitter Voltage Vces: 30 V
• DC Collector Current: 2 A
• DC Current Gain Min: 30
• DC Current Gain: 4
• Gain Bandwidth ft Typ: 4 MHz
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: 3-TO-220
• Power Dissipation Pd: 50 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-220
• Transistor Polarity: NPN

RoHS: Yes