Datasheet STS01DTP06 - STMicroelectronics TRANSISTOR, DUAL, NPN/PNP, SO-8

Detailed Description

Manufacturer: STMicroelectronics

Description: TRANSISTOR, DUAL, NPN/PNP, SO-8

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Docket:
STS01DTP06
Dual NPN-PNP complementary Bipolar transistor
General features
VCE(sat) 0.35V
hFE >100

Specifications:

• Collector Emitter Voltage V(br)ceo: 30 V
• Collector Emitter Voltage Vces: 700 mV
• Continuous Collector Current Ic Max: 3 A
• Current Ib: 1 A
• Current Ic Continuous a Max: 2 A
• Current Ic NPN Device: 3 A
• Current Ic PNP Device: 3 A
• DC Collector Current: 3 A
• DC Current Gain Min: 100
• DC Current Gain: 1 A
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• Package / Case: SOIC
• Pin Configuration: 1(E1), 2(B1), 3(E2), 4(B2), 5&6(C2), 7&8(C1)
• Pin Format: Q1=NPN, Q2=PNP
• Power Dissipation Pd: 2 W
• Power Dissipation Ptot Max: 1.6 W
• Power Dissipation per device Max: 2 W
• Pulsed Current Icm: 6 A
• SMD Marking: SO1DTP06
• SVHC: No SVHC (15-Dec-2010)
• Saturation Current Ic: 2 A
• Transistor Case Style: SOIC
• Transistor Polarity: NPN / PNP
• Voltage Vcbo: 60 V
• Voltage Vceo Sat: 700 mV

RoHS: Yes

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• LICEFA - V11-7-6-10
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• Roth Elektronik - RE932-01