Datasheet MJD112T4 - STMicroelectronics DARLINGTON TRANSISTOR, NPN, 100 V, TO-252

Detailed Description

Manufacturer: STMicroelectronics

Description: DARLINGTON TRANSISTOR, NPN, 100 V, TO-252

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Docket:
MJD112 MJD117
Complementary power Darlington transistors
Features
.
Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode

Specifications:

• Collector Emitter Voltage, V(br)ceo: 100 V
• DC Collector Current: 2 A
• DC Current Gain Max (hfe): 1000
• Number of Pins: 3
• Power Dissipation, Pd: 20 W
• Transistor Polarity: NPN

RoHS: Yes