Datasheet ZVN2110G - Diodes MOSFET, N, LOGIC, SOT-223

Detailed Description

Manufacturer: Diodes

Description: MOSFET, N, LOGIC, SOT-223

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Docket:
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 ­ OCTOBER 1995 7 FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED
ZVN2110G
D
S PARTMARKING DETAIL COMPLEMENTARY TYPE ZVN2110 ZVP2110G D G

Simulation Model

Specifications:

• Continuous Drain Current Id: 500 mA
• Current Id Max: 500 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 100 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 4 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 2 W
• Power Dissipation Ptot Max: 2 W
• Pulse Current Idm: 6 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: ZVN2110
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 12 mm
• Threshold Voltage Vgs Typ: 2.4 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.4 V

RoHS: Yes