Datasheet ZXM62P03E6 - Diodes MOSFET, P, SOT-23-6
Part Number: ZXM62P03E6
Detailed Description
Manufacturer: Diodes
Description: MOSFET, P, SOT-23-6
Docket:
ZXM62P03E6
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15 DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.
This makes them ideal for high efficiency, low voltage, power management applications.
ID=-2.6A
Specifications:
- Continuous Drain Current Id: 2.6 A
- Current Id Max: -1.5 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 30 V
- Mounting Type: SMD
- Number of Pins: 6
- Number of Transistors: 1
- On Resistance Rds(on): 110 MOhm
- On State Resistance Max: 150 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOT-23
- Power Dissipation Pd: 1.1 W
- Pulse Current Idm: 18 A
- Rds(on) Test Voltage Vgs: 10 V
- SMD Marking: 2P03
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: -1 V
- Transistor Case Style: SOT-23
- Transistor Polarity: P Channel
- Voltage Vds Typ: -30 V
- Voltage Vgs Max: -12 V
- Voltage Vgs Rds on Measurement: -10 V
- Voltage Vgs th Min: -1 V
RoHS: Yes