Datasheet IXTP4N80P - IXYS MOSFET, N, TO-220

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-220

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Docket:
Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA4N80P IXTP4N80P
VDSS = 800 = 3.6 ID25 RDS(on) 3.4

Specifications:

• Capacitance Ciss Typ: 750 pF
• Continuous Drain Current Id: 4 A
• Current Id Max: 3.6 A
• Drain Source Voltage Vds: 800 V
• Junction to Case Thermal Resistance A: 1.25°C/W
• Mounting Type: Through Hole
• N-channel Gate Charge: 15nC
• Number of Pins: 3
• On State Resistance: 3 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-220
• Power Dissipation Pd: 100 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 600 ns
• Threshold Voltage Vgs Typ: 5.5 V
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Voltage Vds Typ: 800 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5