Datasheet BSH112,235 - NXP MOSFET, N CH, 60 V, 300 mA, SOT-23

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, 60 V, 300 mA, SOT-23

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Docket:
BSH112
N-channel enhancement mode field-effect transistor
Rev.

01 -- 25 August 2000
M3D088
Product specification

Specifications:

• Continuous Drain Current Id: 500 mA
• Current Id Max: 300 mA
• Drain Source Voltage Vds: 60 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 5 Ohm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 830 mW
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 75 V
• Voltage Vgs Max: 2 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

BSH112235, BSH112 235