Datasheet BUK7880-55 - NXP MOSFET, N CH 55 V SOT223

NXP BUK7880-55

Part Number: BUK7880-55

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH 55 V SOT223

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Docket:
Philips Semiconductors
Product specification
TrenchMOSTM transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

Using 'trench' technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in automotive and general purpose switching applications.

Specifications:

  • Continuous Drain Current Id: 7.5 A
  • Current Id Max: 7.5 A
  • Drain Source Voltage Vds: 55 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On Resistance Rds(on): 80 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-223
  • Power Dissipation: 1.8 W
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (19-Dec-2011)
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: SOT-223
  • Transistor Polarity: N Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: 55 V
  • Voltage Vgs Max: 16 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

BUK788055, BUK7880 55