Datasheet BUK9840-55 - NXP MOSFET, N CH 55 V SOT223

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH 55 V SOT223

Download Data Sheet

Docket:
Philips Semiconductors
Product specification
TrenchMOSTM transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

The device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in automotive and general purpose switching applications.

Specifications:

• Continuous Drain Current Id: 10.7 A
• Current Id Max: 10.7 A
• Drain Source Voltage Vds: 55 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 40 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation: 8.3 W
• Rds(on) Test Voltage Vgs: 5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 55 V
• Voltage Vgs Max: 10 V
• Voltage Vgs Rds on Measurement: 5 V

RoHS: Yes

Other Names:

BUK984055, BUK9840 55