Datasheet PHT4NQ10LT,135 - NXP MOSFET N-CH 100 V 3.5 A SOT223

Detailed Description

Manufacturer: NXP

Description: MOSFET N-CH 100 V 3.5 A SOT223

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Docket:
PHT4NQ10LT
N-channel enhancement mode field-effect transistor
M3D087
Rev.

01 -- 11 September 2000
Product specification

Specifications:

• Continuous Drain Current Id: 1.75 A
• Current Id Max: 3.5 A
• Drain Source Voltage Vds: 100 V
• Mounting Type: SMD
• Number of Pins: 4
• On State Resistance: 250 MOhm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 6.9 W
• Rds(on) Test Voltage Vgs: 5 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 130 V
• Voltage Vgs Max: 2 V
• Voltage Vgs Rds on Measurement: 5 V

RoHS: Yes

Other Names:

PHT4NQ10LT135, PHT4NQ10LT 135