Datasheet NTD2955G - ON Semiconductor MOSFET, P CH, 60 V, 12 A, D-PAK

Detailed Description

Manufacturer: ON Semiconductor

Description: MOSFET, P CH, 60 V, 12 A, D-PAK

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Docket:
NTD2955, NTD2955P, NVD2955 Power MOSFET
-60 V, -12 A, P-Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.

Designed for low-voltage, high- speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
Features http://onsemi.com
V(BR)DSS -60 V RDS(on) TYP 155 mW @ -10 V, 6 A ID MAX -12 A

Specifications:

• Continuous Drain Current Id: -12 A
• Drain Source Voltage Vds: -60 V
• MSL: MSL 1 - Unlimited
• Number of Pins: 3
• On Resistance Rds(on): 0.155 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 55 W
• Rds(on) Test Voltage Vgs: -10 V
• Threshold Voltage Vgs Typ: -2.8 V
• Transistor Case Style: TO-252
• Transistor Polarity: P Channel
• RoHS: Yes
• SVHC: No SVHC (18-Jun-2012)