Datasheet RTQ020N03TR - Rohm MOSFET, N, VGS -2.5 V

Detailed Description

Manufacturer: Rohm

Description: MOSFET, N, VGS -2.5 V

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Docket:
RTQ020N03
Transistors
2.5V Drive Nch MOS FET
RTQ020N03
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)

Simulation Model

Specifications:

• Capacitance Ciss Typ: 135 pF
• Continuous Drain Current Id: 2 A
• Drain Source Voltage Vds: 30 V
• Fall Time tf: 9 ns
• Mounting Type: SMD
• On State Resistance: 194 MOhm
• Package / Case: TSMT6
• Pin Configuration: D(1+2+5+6), S(4), G(3)
• Power Dissipation Pd: 1.25 W
• Pulse Current Idm: 8 A
• Rise Time: 11 ns
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: TSMT
• Transistor Polarity: N Channel
• Transistor Type: Protected MOSFET
• Voltage Vds Typ: 30 V
• Voltage Vgs Rds on Measurement: 2.5 V
• Voltage Vgs th Max: 1.5 V
• Voltage Vgs th Min: 500 mV

RoHS: Yes