Datasheet RTQ040P02TR - Rohm MOSFET, P, 20 V, 4 A

Detailed Description

Manufacturer: Rohm

Description: MOSFET, P, 20 V, 4 A

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Docket:
RTQ040P02
Transistors
2.5V Drive Pch MOS FET
RTQ040P02
Structure Silicon P-channel MOS FET

Simulation Model

Specifications:

• Continuous Drain Current Id: 4 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• On State Resistance: 85 MOhm
• Package / Case: TSMT6
• Power Dissipation Pd: 1.25 W
• Pulse Current Idm: 16 A
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: -2 V
• Transistor Case Style: TSMT
• Transistor Polarity: P Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: -20 V
• Voltage Vgs Rds on Measurement: 4 V
• Voltage Vgs th Max: -2 V
• Voltage Vgs th Min: -0.7 V

RoHS: Yes