Datasheet US5U3TR - Rohm MOSFET, N, VGS=-2.5V

Detailed Description

Manufacturer: Rohm

Description: MOSFET, N, VGS=-2.5V

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Docket:
US5U3
Transistors
2.5V Drive Nch+SBD MOSFET
US5U3
Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions (Unit : mm)

Specifications:

• Capacitance Ciss Typ: 80 pF
• Continuous Drain Current Id: 1.5 A
• Drain Source Voltage Vds: 30 V
• Fall Time tf: 6 ns
• Mounting Type: SMD
• On State Resistance: 340 MOhm
• Package / Case: TUMT5
• Pin Configuration: 1(G), 2(S), 3(A), 4(K), 5(D)
• Power Dissipation Pd: 700 mW
• Pulse Current Idm: 6 A
• Rise Time: 9 ns
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: TUMT
• Transistor Polarity: N Channel
• Transistor Type: Protected MOSFET
• Voltage Vds Typ: 30 V
• Voltage Vgs Rds on Measurement: 2.5 V
• Voltage Vgs th Max: 1.5 V
• Voltage Vgs th Min: 500 mV

RoHS: Yes