Datasheet STMicroelectronics STB11NM60T4
| Manufacturer | STMicroelectronics |
| Series | STB11NM60T4 |
| Part Number | STB11NM60T4 |
N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in D2PAK package
Datasheets
Datasheet STB11NM60T4, STP11NM60
PDF, 639 Kb, Language: en, File uploaded: May 15, 2020, Pages: 21
N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh II Power MOSFETs in D²PAK and TO-220
N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh II Power MOSFETs in D²PAK and TO-220
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Detailed Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology.
These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Features:
- 100% avalanche tested
- Low gate input resistance
- Low input capacitance and gate charge
Status
| Lifecycle Status | NRND (Not recommended for new designs) |
Packaging
| Package | D2PAK |
Other Options
Manufacturer's Classification
- Power Transistors > Power MOSFETs > STPOWER N-channel MOSFETs > 350 V to 700 V
