Datasheet 2SK2613(F) - Toshiba MOSFET N CH 8 A 1000 V TO3P

Detailed Description

Manufacturer: Toshiba

Description: MOSFET N CH 8 A 1000 V TO3P

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Specifications:

• Continuous Drain Current Id: 8 A
• Current Id Max: 8 A
• Drain Source Voltage Vds: 1 kV
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 1.7 Ohm
• Package / Case: TO-3P
• Power Dissipation Pd: 150 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-3P
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 1 kV
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes