CSD17310Q5A
www.ti.com SLPS255A – FEBRUARY 2010 – REVISED JULY 2010 30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17310Q5A FEATURES 1 2 PRODUCT SUMMARY Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package VDS Drain to Source Voltage 30 V Qg Gate Charge Total (4.5V) 8.9 nC Qgd Gate Charge Gate to Drain RDS(on)
VGS(th) DESCRIPTION
The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications,
and optimized for 5V gate drive applications.
Top View
1 8 D S 2 7 D S 3 6 D G 4 mΩ VGS = 4.5V 4.5 mΩ VGS = 8V 3.9 mΩ Threshold Voltage 1.3 V ORDERING INFORMATION Notebook Point of Load
Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
Optimized for Synchronous FET Applications S nC
5.7 Device Package Media CSD17310Q5A SON 5-mm Г— 6-mm
Plastic Package 13-Inch
Reel APPLICATIONS Drain to Source On Resistance 2.1
VGS = 3V Qty Ship 2500 Tape and …
