Datasheet SI2333CDS-T1-GE3 - Vishay MOSFET, P-CH, 12 V, 7.1 A, SOT23

Detailed Description

Manufacturer: Vishay

Description: MOSFET, P-CH, 12 V, 7.1 A, SOT23

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Docket:
Si2333CDS
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V) RDS(on) () 0.035 at VGS = - 4.5 V - 12 0.045 at VGS = - 2.5 V 0.059 at VGS = - 1.8 V ID (A)a - 5.1 - 4.5 - 3.9 9 nC Qg (Typ.)

Specifications:

• Current Id Max: -7.1 A
• Drain Source Voltage Vds: -12 V
• Number of Pins: 3
• On State Resistance: 28.5 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 2.5 W
• Rds(on) Test Voltage Vgs: -4.5 V
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vgs Max: 8 V

RoHS: Yes

Other Names:

SI2333CDST1GE3, SI2333CDS T1 GE3