Datasheet TK80D08K3(Q) - Toshiba MOSFET, N CH, 75 V, 80 A, TO-220W

Detailed Description

Manufacturer: Toshiba

Description: MOSFET, N CH, 75 V, 80 A, TO-220W

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Docket:
TK80D08K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)
TK80D08K3
Switching Regulator Applications
· · · · Low drain-source ON-resistance: RDS (ON) = 3.6 m (typ.) High forward transfer admittance: |Yfs| = 200 S Low leakage current: IDSS = 10 A (max) (VDS = 75 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Specifications:

• Current Id Max: 80 A
• Drain Source Voltage Vds: 75 V
• Number of Pins: 3
• On State Resistance: 3.6 MOhm
• Power Dissipation Pd: 100 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Y-Ex

Accessories:

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• ABL HEATSINKS - 205AB0500B
• GC ELECTRONICS - 10-8108