CSD17311Q5
www.ti.com SLPS257A – MARCH 2010 – REVISED SEPTEMBER 2010 30V N-Channel NexFET™ Power MOSFET
Check for Samples: CSD17311Q5 PRODUCT SUMMARY FEATURES 1 2 Optimized for 5V Gate Drive
Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
Top View
8 V Gate Charge Total (4.5V) 24 nC Qgd Gate Charge Gate to Drain Drain to Source On Resistance 5.2 nC VGS = 3V 2.3 mΩ VGS = 4.5V 1.8 mΩ VGS = 8V 1.6 mΩ Threshold Voltage 1.2 V ORDERING INFORMATION DESCRIPTION 1 30 Qg VGS(th) Notebook Point-of-Load
Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems S Drain to Source Voltage RDS(on) APPLICATIONS VDS Device Package Media CSD17311Q5 SON 5-mm Г— 6-mm
Plastic Package 13-Inch
Reel Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 100 A Continuous Drain Current(1) 32 A IDM Pulsed Drain Current, TA = 25°C(2) 200 A PD Power Dissipation(1) 3.2 W TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C EAS Avalanche Energy, Single Pulse
ID = 113A, L = 0.1mH, RG = 25Ω 638 mJ ID D S 2 7 D S 3 6 D G 4 5 D (1) Typical RqJA = 40В°C/W when mounted on a 1-inch2 …
